Oxide Semiconductors: Volume 1633 Symposium Held December 1-6, 2013, Boston, Massachusetts, U.s.a.

Symposium R, 'Oxide Semiconductors' was held December 1–6 at the 2013 MRS Fall Meeting in Boston, Massachusetts. Oxide semiconductors are poised to take a more active role in modern electronics, particularly in the field of thin film transistors. While many advances have been made in terms of our understanding of fundamental optical and electronic characteristics, there remain many questions in terms of defects, doping, and optimal growth/synthesis conditions. This symposium proceedings volume represents recent advances in growth and characterisation of a number of different oxide semiconductors, as well as device fabrication.

Part I. Synthesis: 1. Synthesis and characterization of copper oxide compounds; 2. Characterization of tin oxide grown by molecular beam epitaxy; 3. Epitaxial growth of (Na,K)NbO3 based materials on SrTiO3 by pulsed laser deposition; 4. Structural and electrical properties of LaNiO3 thin films grown on (100) and (001) oriented SrLaAlO4 substrates by chemical solution deposition method; Part II. Optical and Electrical Characterization: 5. Native point defects in multicomponent transparent conducting oxides; 6. Electronic transport characterization of BiVO4 using AC Field Hall Technique; 7. A DLTS study of a ZnO microwire, a thin film and bulk material; 8. Evaluation of sub-gap states in amorphous In-Ga-Zn-O thin films treated with various process conditions; 9. Effects of N2O addition on the properties of ZnO thin films grown using high-temperature H2O generated by catalytic reaction; 10. Density functional study of benzoic acid derivatives modified SnO2 (110) surface; 11. Defect driven emission from ZnO nano rods synthesized by fast microwave irradiation method for optoelectronic applications; 12. Breaking of raman selection rules in Cu2O by intrinsic point defects; 13. Characterization of mechanical, optical and structural properties of bismuth oxide thin films as a write-once medium for blue laser recording; Part III. Device Issues: 14. High performance IGZO TFTs with modified etch stop structure on glass substrates; 15. Amorphous zinc-tin oxide thin films fabricated by pulsed laser deposition at room temperature; 16. Solution processed resistive random access memory devices for transparent solid-state circuit systems; 17. Structural and electrical characteristics of ternary oxide SmGdO3 for logic and memory devices; 18. Correlation of resistance switching behaviors with dielectric functions of manganite films: a study by spectroscopic ellipsometry; 19. A continuous composition spread approach towards monolithic, wavelength-selective multichannel UV-photo-detector arrays; 20. Metal-semiconductor-insulator-metal structure field-effect transistors based on zinc oxides and doped ferroelectric thin films; 21. Highly reliable passivation layer for a-InGaZnO thin-film transistors fabricated using polysilsesquioxane.