Nanoelectronic Device Applications Handbook

The book has two purposes. First, it assembles the latest research in the field of nanoelectronics device technology in one place. Second, it exposes the reader to myriad applications that nanoelectronics devices technology has enabled. The book is meant for advanced graduate research work or for academicians and researchers. Contributed by world-renowned experts from academia and industry from around the globe, nanoelectronics devices will find widespread application range.

Nanoelectronic Device Applications Handbook gives a comprehensive snapshot of the state of the art in nanodevices for nanoelectronics applications. Combining breadth and depth, the book includes 68 chapters on topics that range from nano-scaled complementary metal–oxide–semiconductor (CMOS) devices through recent developments in nano capacitors and AlGaAs/GaAs devices. The contributors are world-renowned experts from academia and industry from around the globe. The handbook explores current research into potentially disruptive technologies for a post-CMOS world. These include: Nanoscale advances in current MOSFET/CMOS technology Nano capacitors for applications such as electronics packaging and humidity sensors Single electron transistors and other electron tunneling devices Quantum cellular automata and nanomagnetic logic Memristors as switching devices and for memory Graphene preparation, properties, and devices Carbon nanotubes (CNTs), both single CNT and random network Other CNT applications such as terahertz, sensors, interconnects, and capacitors Nano system architectures for reliability Nanowire device fabrication and applications Nanowire transistors Nanodevices for spintronics The book closes with a call for a new generation of simulation tools to handle nanoscale mechanisms in realistic nanodevice geometries. This timely handbook offers a wealth of insights into the application of nanoelectronics. It is an invaluable reference and source of ideas for anyone working in the rapidly expanding field of nanoelectronics.

Section I Nano-CMOS ModelingValidation of Nano-CMOS Predictive Technology Model Tool on NanoHUB.orgAlejandro Rodriguez and Hasina F. HuqComparative Analysis of Mobility and Dopant Number Fluctuation Models for the Threshold Voltage Fluctuation Estimation in 45 nm Channel Length MOSFET DeviceNabil Ashraf, Dragica Vasileska, Gilson Wirth, and Purushothaman SrinivasanImpact of Random Interface Traps on Asymmetric Characteristic Fluctuation of 16-nm-Gate MOSFET DevicesYiming LiSection II Nano-CMOS TechnologyBottom-Up Approaches for CMOS Scaling in the Nanoscale EraMrunal A. Khaderbad and V. Ramgopal RaoStudy of Lanthanum Incorporated HfO2 Nanoscale Film Deposited as an MOS Device Structure Using a Dense Plasma Focus DeviceA. Srivastava and Y. MalhotraLow-Power Reliable Nano AddersAzam Beg, Mawahib Hussein Sulieman, Valeriu Beiu, and Walid IbrahimSection III Nano CapacitorsPackage-Compatible High-Density Nano-Scale Capacitors with Conformal Nano-DielectricsHimani Sharma, P. Markondeya Raj, Parthasarathi Chakraborti, Yushu Wang, and Rao TummalaModified Carbon Nanostructures for Display and Energy StorageSivaram ArepalliProduction and Characterization of Nanoparticle Dispersions of Organic Semiconductors for Potential Applications in Organic ElectronicsMuhammad Hassan Sayyad, Fazal Wahab, Munawar Ali Munawar, Muhammad Shahid, Jamil Anwar Chaudry, Khaulah Sulaiman, Zubair Ahmad, and Abdullah Mohamed AsiriInvestigation of Charge Accumulation in Si3N4/SiO2 Dielectric Stacks for Electrostatically Actuated NEMS/MEMS ReliabilityGang Li, Ulrik Hanke, and Xuyuan ChenSection IV Terahertz Systems and DevicesNano Antennas for Energy ConversionMario Bareiß, Andreas Hochmeister, Gunther Jegert, Gregor Koblmüller, Ute Zschieschang, Hagen Klauk, Bernhard Fabel, Giuseppe Scarpa, Wolfgang Porod, and Paolo LugliBallistic Transistor Logic for Circuit ApplicationsDavid Wolpert and Paul AmpaduSection V Single Electron Transistors and Electron Tunneling DevicesSimultaneously Controlled Tuning of Tunneling Properties of Integrated Nanogaps Using Field-Emission-Induced ElectromigrationMitsuki Ito, Shunsuke Akimoto, Ryutaro Suda, and Jun-Ichi ShirakashiHigh-Resistive Tunnel Junctions for Room-Temperature-Operating Single-Electron Transistors Fabricated Using Chemical Oxidation of Tungsten NanoparticlesP. Santosh Kumar Karre, Daw Don Cheam, Manoranjan Acharya, and Paul L. BergstromAxon-Inspired Communication SystemsValeriu Beiu, Liren Zhang, Azam Beg, Walid Ibrahim, and Mihai TacheElectromechanical Modeling of GNP Nanocomposites for Integrated Stress Monitoring of Electronic DevicesAlessandro Giuseppe D’Aloia, Alessio Tamburrano, Giovanni De Bellis, Jacopo Tirillò, Fabrizio Sarasini, and Maria Sabrina SartoSection VI Quantum Cellular AutomataAn HDL Model of Magnetic Quantum-Dot Cellular Automata Devices and CircuitsMarco Ottavi, Salvatore Pontarelli, Adelio Salsano, and Fabrizio LombardiRestoring Divider Design for Quantum-Dot Cellular AutomataSeong-Wan Kim and Earl E. Swartzlander, Jr.LINA-QCA: Theory, Design, and Viable Implementation StrategiesLoyd R. Hook IV and Samuel C. LeeMinimal Majority Gate Mapping of Four-Variable Functions for Quantum-Dot Cellular AutomataPeng Wang, Mohammed Niamat, and Srinivasa VemuruSection VII Memristors, Resistive Switches, and MemoryNanodevices: Describing Function and Liénard EquationAlberto DelgadoSensing and Writing Operations of Nano-Crossbar Memory ArraysAn ChenModeling of Complementary Resistive SwitchesE. Linn, S. Menzel, R. Rosezin, U. Böttger, R. Bruchhaus, and R. WaserHybrid Design of a Memory Cell Using a Memristor and Ambipolar TransistorsPilin Junsangsri and Fabrizio LombardiSpike Timing-Dependent Plasticity Using Memristors and Nano-Crystalline Silicon TFT MemoriesKurtis D. Cantley, Anand Subramaniam, and Eric M. VogelThermally Actuated Nanoelectromechanical Memory: A New Memory Concept for Spacecraft ApplicationElham Maghsoudi and Michael James MartinSection VIII Graphene Preparation and PropertiesLow-Stress Transfer of Graphene and Its Tunable Resistance by Remote Plasma Treatments in HydrogenWaileong Chen, Chia-Hao Tu, Keng-Chih Liang, Chih-Yi Liu, Chuan-Pu Liu, and Yonhua TzengHigh-Yield Dielectrophoretic Deposition and Ion Sensitivity of GraphenePengfei Li, Nan Lei, Jie Xu, and Wei XueMultilayer Graphene Grid and Nanowire Fabrication and PrintingMasudur Rahman and Michael L. NortonSection IX Graphene DevicesNanotransistors Using Graphene Interfaced with Advanced Dielectrics for High-Speed CommunicationOsama M. Nayfeh, Ki Kang Kim, and Jing KongGraphene-on-Diamond Devices and Interconnects: Carbon sp2-on-sp3 TechnologyJie Yu, Guanxiong Liu, Alexander A. Balandin, and Anirudha V. SumantGraphene Band Gap Modification via Functionalization with Metal-Bis-Arene MoleculesPaul Plachinda, David R. Evans, and Raj SolankiSection X Carbon Nanotube ApplicationsIntegrating Low-Temperature Carbon Nanotubes as Vertical Interconnects in Si TechnologySten Vollebregt, Ryoichi Ishihara, Jaber Derakhshandeh, Johan van der Cingel, Hugo Schellevis, and C.I.M. BeenakkerReadout Circuit Design for MWCNT Infrared SensorsLiangliang Chen, Ning Xi, Hongzhi Chen, and King Wai Chiu LaiUse of Vertically Aligned Carbon Nanotubes for Electrochemical Double-Layer CapacitorsAdrianus I. Aria, Mélanie Guittet, and Morteza GharibSpray Deposition of Carbon Nanotube Thin FilmsAlaa Abdellah, Paolo Lugli, and Giuseppe ScarpaElectrical Control of Synthesis Conditions for Locally Grown CNTs on a Polysilicon MicrostructureKnut E. Aasmundtveit, Bao Quoc Ta, Nils Hoivik, and Einar HalvorsenSection XI Carbon Nanotube Transistor ModelingA Qualitative Comparison of Energy Band Gap Equations with a Focus on Temperature and Its Effect on CNTFETsJesus Torres and Hasina F. HuqReal-Time Quantum Simulation of Terahertz Response in Single-Walled Carbon NanotubeZuojing Chen, Eric Polizzi, and Sigfrid YngvessonSection XII Carbon Nanotube Transistor FabricationFabrication of Stable n-Type Thin-Film Transistor with Cs Encapsulated Single-Walled Carbon NanotubesToshiaki Kato, Rikizo Hatakeyama, and Yosuke OsanaiPrinting Technology and Advantage of Purified Semiconducting Carbon Nanotubes for Thin Film TransistorsHideaki Numata, Kazuki Ihara, Takeshi Saito, and Fumiyuki NiheySection XIII Random CNT Network TransistorsSolution-Processed Random Carbon Nanotube Networks Used in a Thin-Film TransistorQingqing Gong, Edgar Albert, Bernhard Fabel, Alaa Abdellah, Paolo Lugli, Giuseppe Scarpa, and Mary B. Chan-ParkAnalysis of Yield Improvement Techniques for CNFET-Based Logic GatesRehman Ashraf, Malgorzata Chrzanowska-Jeske, and Siva G. NarendraLow-Power and Metallic-CNT-Tolerant CNTFET SRAM DesignZhe Zhang and José G. Delgado-FriasSection XIV Nano-Redundant SystemsOptimized Built-In Self-Test Technique for CAEN-Based Nanofabric SystemsMaciej Zawodniok and Sambhav KundaikarAdaptive Fault-Tolerant Architecture for Unreliable Device TechnologiesNivard Aymerich, Sorin Cotofana, and Antonio RubioSection XV Nanowire FabricationGrowth and Characterization of GaAs Nanowires Grown on Si SubstratesJung-Hyun Kang, Qiang Gao, Hark Hoe Tan, Hannah J. Joyce, Yong Kim, Yanan Guo, Hongyi Xu, Jin Zou, Melodie A. Fickenscher, Leigh M. Smith, Howard E. Jackson, Jan M. Yarrison-Rice, and Chennupati JagadishSynthesis and Characterization of n- and p-Doped Tin Oxide Nanowires for Gas Sensing ApplicationsHoang A. Tran and Shankar B. RananavareCu Silicide Nanowires: Fabrication, Characterization, and Application to Li-Ion BatteriesPoh Keong Ng, Reza Shahbazian-Yassar, and Carmen Maria LilleyHigh-Aspect-Ratio Metallic Nanowires by Pulsed ElectrodepositionMatthias Graf, Alexander Eychmüller, and Klaus-Jürgen WolterSection XVI Nanowire ApplicationsZinc Oxide Nanowires for Biosensing ApplicationsAnurag Gupta, Bruce C. Kim, Dawen Li, Eugene Edwards, Christina Brantley, and Paul RuffinAqueous Synthesis of n-/p-type ZnO Nanorods on Porous Silicon for the Application of p–n Junction DeviceEunkyung Park, Jungwoo Lee, Taehee Park,

James (Jim) E. Morris is an electrical and computer engineering professor at Portland State University, Oregon, and professor emeritus at SUNY-Binghamton, having served as department chair at both. Dr. Morris has served the IEEE Components Packaging and Manufacturing Technology (CPMT) Society as a treasurer (1991–1997), BoG member (1996–1998, 2011–2013), VP for conferences (1998–2003), distinguished lecturer (2000–present), CPMT Transactions associate editor (1998–present), and co-chair of the CPMT Technical Committee on nanotechnology, and was recognized with the 2005 CPMT David Feldman Outstanding Contribution Award. He serves on the IEEE Nanotechnology Council (NTC) as CPMT representative (2007–present), VP for conferences (2013–2014), and past Awards chair. He has edited or co-authored five books on electronics packaging, including one on nanopackaging. Krzysztof (Kris) Iniewski manages R&D at Redlen Technologies, Inc., a startup company in Vancouver, Canada. He is also the president of CMOS Emerging Technologies Research Inc., an organization of high-tech events covering communications, microsystems, optoelectronics, and sensors. Dr. Iniewski has held numerous faculty and management positions at the University of Toronto, University of Alberta, Simon Fraser University, and PMC-Sierra, Inc. He has published more than 100 research papers in international journals and conferences. He holds 18 international patents granted in the United States, Canada, France, Germany, and Japan. He is a frequent invited speaker, has consulted for multiple organizations internationally, and has written and edited several books.