The MOCVD Challenge A survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications, Second Edition

Written by one of the driving forces in the field, The MOCVD Challenge is a comprehensive review covering GaInAsP–InP, GaInAsP–GaAs, and related material for electronic and photonic device applications. These III-V semiconductor compounds have been used to realize the electronic, optoelectronic, and quantum devices that have revolutionized telecommunications. The figure on the back cover gives the energy gap and lattice parameter for the entire compositional range of the binary, ternary, and quaternary combinations of these III-V elements. By understanding the material and learning to control the growth new devices become possible: the front cover shows the world’s first InP/GaInAs superlattice that was fabricated by the author — this has gone on to be the basis of modern quantum devices like quantum cascade lasers and quantum dot infrared photodetectors. Now in its second edition, this updated and combined volume contains the secrets of MOCVD growth, material optimization, and modern device technology. It begins with an introduction to semiconductor compounds and the MOCVD growth process. It then discusses in situ and ex situ characterization for MOCVD growth. Next, the book examines in detail the specifics of the growth of GaInP(As)-GaAs and GaInAs(P)-InP material systems. It examines MOCVD growth of various III-V heterojunctions and superlattices and discusses electronic and optoelectronic devices realized with this material. Spanning 30 years of research, the book is the definitive resource on MOCVD.

Introduction to Semiconductor Compounds III–V semiconductor alloys III–V semiconductor devices Technology of multilayer growth Growth Technology Metalorganic chemical vapor deposition New non-equilibrium growth techniques In situ Characterization during MOCVD Reflectance anisotropy and ellipsometry Optimization of the growth of III–V binaries by RDS RDS investigation of III–V lattice-matched heterojunctions RDS investigation of III–V lattice-mismatched structures Insights on the growth process Ex situ Characterization Techniques Chemical bevel revelation Deep-level transient spectroscopy X-ray diffraction Photoluminescence Electromechanical capacitance-voltage and photovoltage spectroscopy Resistivity and Hall measurement Thickness measurement MOCVD Growth of GaAs Layers GaAs and related compounds band structure MOCVD growth mechanism of GaAs and related compounds Experimental details Incorporation of impurities in GaAs grown by MOCVD Growth and Characterization of the GaInP–GaAs System Growth details Structural order in GaxIn1-xP alloys grown by MOCVD Defects in GaInP layers grown by MOCVD Doping behavior of GaInP GaAs–GaInP heterostructures Growth and characterization of GaInP–GaAs multilayers by MOCVDOptical and structural investigations of GaAs–GaInP quantum wells and superlattices grown by MOCVD Characterization of GaAs–GaInP quantum wells by auger analysis of chemical bevels Evaluation of the band offsets of GaAs–GaInP multilayers by electroreflectanceIntersubband hole absorption in GaAs–GaInP quantum wells Optical Devices Electro-optical modulators GaAs-based infrared photodetectors grown by MOCVD Solar cells and GaAs solar cells GaAs-Based Lasers Basic physical concepts Laser structures New GaAs-based materials for lasers GaAs-Based Heterojunction Electron Devices Grown by MOCVDHeterostructure field-effect transistors (HFETs) Heterojunction bipolar transistors (HBTs) Optoelectronic Integrated Circuits (OEICs) Material considerations OEICs on silicon substrates The role of optoelectronic integration in computing Examples of optoelectronic integration by MOCVD InP–InP System: MOCVD Growth, Characterization, and Applications Energy band structure of InP Growth and characterization of InP using TEIn Growth and characterization of InP using TMIn Incorporation of dopants Applications of InP epitaxial layers GaInAs–InP System: MOCVD Growth, Characterization, and Applications Growth conditions Optical and crystallographic properties, and impurity incorporation in GaInAs grown by MOCVD Shallow p+ layers in GaInAs grown by MOCVD by mercury implantation GaInAs–InP heterojunctions: Multiquantum wells and superlattices grown by MOCVD Magnetotransport in GaInAs–InP heterojunctions grown by MOCVDApplications of GaInAs–InP system grown by MOCVD GaInAsP–InP System: MOCVD Growth, Characterization, and Applications Growth conditions Characterization Applications of GaInAsP–InP systems grown by MOCVD Strained Heterostructures: MOCVD Growth, Characterization, and Applications Growth procedure and characterization Growth of GaInAs–InP multiquantum wells on GGG substrates Applications Monolayer epitaxy of (GaAs)n(InAs)n–InP by MOCVD MOCVD Growth of III–V Heterojunctions and Superlattices on Silicon Substrates MOCVD growth of GaAs on silicon InP grown on silicon GaInAsP–InP grown on silicon Applications Optoelectronic Devices Based on Quantum Structures GaAs and InP based quantum well infrared photodetectors (QWIP) Self-assembled quantum dots, and quantum dot based photodetectors Quantum dot lasers InP based quantum cascade lasers (QCLs)

Manijeh Razeghi is with the Center of Quantum Devices at Northwestern University.