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basu prasanta  kumar; mukhopadhyay bratati; basu rikmantra - semiconductor laser theory
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Semiconductor Laser Theory

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Dettagli

Genere:Libro
Lingua: Inglese
Editore:

CRC Press

Pubblicazione: 07/2015
Edizione: 1° edizione





Note Editore

Developed from the authors’ classroom-tested material, Semiconductor Laser Theory takes a semiclassical approach to teaching the principles, structure, and applications of semiconductor lasers. Designed for graduate students in physics, electrical engineering, and materials science, the text covers many recent developments, including diode lasers using quantum wells, quantum dots, quantum cascade lasers, nitride lasers, group IV lasers, and transistor lasers. The first half of the book presents basic concepts, such as the semiconductor physics needed to understand the operation of lasers, p-n junction theory, alloys, heterostructures, quantum nanostructures, k.p theory, waveguides, resonators, filters, and optical processes. The remainder of the book describes various lasers, including double heterostructure, quantum wire, quantum dot, quantum cascade, vertical-cavity surface-emitting, single-mode and tunable, nitride, group IV, and transistor lasers. This textbook equips students to understand the latest progress in the research and development of semiconductor lasers, from research into the benefits of quantum wire and quantum dot lasers to the application of semiconductor lasers in fiber-optic communications. Each chapter incorporates reading lists and references for further study, numerous examples to illustrate the theory, and problems for hands-on exploration.




Sommario

Introduction to Semiconductor LasersBrief HistoryPrinciple of LasersSemiconductor LaserMaterials for Semiconductor LasersSpecial FeaturesApplications Basic TheoryIntroductionBand StructureE–k Diagram and Effective MassDensity of StatesCarrier ConcentrationIntrinsic and Extrinsic SemiconductorTransport of Charge CarriersExcess CarriersDiffusion and Recombination: The Continuity EquationBasic p-n Junction TheoryI-V and Capacitance–Voltage Characteristics of p-n Junction Heterojunctions and Quantum StructuresIntroductionAlloysHeterojunctionsQuantum StructuresQuantum WellsQuantum Wires and Quantum DotsStrained Layers Band StructuresIntroductionBand Theory: Bloch FunctionsThe k.p Perturbation Theory Neglecting SpinSpin–Orbit InteractionStrain-Induced Band StructureQuantum Wells Waveguides and ResonatorsIntroductionRay Optic TheoryReflection CoefficientsModes of a Planar WaveguideWave Theory of Light Guides3-D Optical WaveguidesResonators Optical ProcessesIntroductionOptical ConstantsAbsorption Processes in SemiconductorsFundamental Absorption in Direct GapIntervalence Band Absorption (IVBA)Free-Carrier AbsorptionRecombination and LuminescenceNonradiative RecombinationCarrier Effect on Absorption and Refractive IndexExcitons Models for DH LasersIntroductionGain in DH LasersThreshold CurrentEffect of Electric Field in Cladding on Leakage CurrentGain SaturationRate Equation ModelRate Equations: Solution of Time-Dependent ProblemsModulation ResponseTemperature Dependence of Threshold Current Quantum Well LasersIntroductionStructuresInterband TransitionsModel Gain Calculation: Analytical ModelRecombination in QWsLoss Processes in QW LasersMQW LaserModulation Response of QW LasersStrained QW LasersType II Quantum Well LasersTunnel-Injection QW Laser Quantum DotsIntroductionQD Growth Mechanisms and StructuresIntroductory Model for QD LasersDeviation from Simple Theory: Effect of BroadeningSubband Structures for Pyramidal QDsRefined Theory for Gain and ThresholdModulation Bandwidth: Rate Equation AnalysisTunnel-Injection QD Lasers Quantum Cascade LasersIntroductionA Brief HistoryBasic PrincipleImproved Design of StructuresNonradiative Inter- and Intrasubband TransitionsSome Design IssuesFrequency ResponseTerahertz QCLQD QCL Vertical-Cavity Surface-Emitting LaserIntroductionStructures and Basic PropertiesElementary Theory of VCSELRequirements for ComponentsCharacteristics of VCSELsModulation BandwidthTemperature DependenceTunnel JunctionQD-VCSELMicrocavity Effects and Nanolasers Single-Mode and Tunable LasersIntroductionNeed for Single-Mode LaserLimitation of FP LaserDistributed FeedbackDBR LaserDFB LaserTunable LasersCharacteristics of Tunable LasersMethods and Structures for Continuous and Discontinuous Tuning Tunable Vertical-Cavity Surface-Emitting Laser Nitride LasersIntroductionPolar Materials and Polarization ChargeQuantum-Confined Stark EffectEarly Work and ChallengesSome Useful Properties of NitridesFirst Laser DiodeViolet c-Plane LaserBlue and Green LasersNonpolar and Semipolar Growth Planes Group IV LasersIntroductionNeed for Si (Group IV) LasersProblems Related to Group IV Semiconductors: Indirect GapRecent ChallengesUse of Heterostructure for Direct Bandgap Type I StructureGe Laser at 1550 nmMid-Infrared Laser Based on GeSnIncorporation of C Transistor LasersIntroductionStructure and Basic Working PrinciplePrinciple of Operation: Model DescriptionGain CompressionFrequency Response Appendix IAppendix II Problems, a Reading List, and References appear at the end of each chapter.




Autore

Prasanta Kumar Basu retired as a professor from the University of Calcutta in 2011 and is now a UGC Basic Scientific Research Faculty Fellow at the university. Dr. Basu has published roughly 120 articles in peer-reviewed journals. His research interests include low-field and hot electron transport and scattering mechanisms in semiconductors and their nanostructures, semiconductor electronic and photonic devices, and optical communication. He earned a PhD in radio physics and electronics from the University of Calcutta. Bratati Mukhopadhyay is an assistant professor in the Institute of Radio Physics and Electronics at the University of Calcutta. Dr. Mukhopadhyay is a member of the IEEE and the current secretary of the IEEE Photonics Society, Calcutta Chapter. Her research interests include physics of semiconductor nanostructures, semiconductor devices and modeling, VLSI circuits, and photonics. She earned a PhD in radio physics and electronics from the University of Calcutta. Rikmantra Basu is an assistant professor in the Department of Electronics and Communications Engineering at the National Institute of Technology Delhi. Dr. Basu is a member of the IEEE. His research interests include semiconductor devices, electronic circuits and devices, optoelectronics and optical communication, and nanophotonics. He earned a Ph.D. in nanotechnology from the University of Calcutta.










Altre Informazioni

ISBN:

9781466561915

Condizione: Nuovo
Dimensioni: 9.25 x 6.25 in Ø 2.12 lb
Formato: Copertina rigida
Illustration Notes:171 b/w images and 61 tables
Pagine Arabe: 551


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