Ion-Solid Interactions Fundamentals and Applications

Modern technology depends on materials with precisely controlled properties. Ion beams are a favored method to achieve controlled modification of surface and near-surface regions. In every integrated circuit production line, for example, there are ion implantation systems. In addition, in integrated circuit technology, ion beams are used to modify the mechanical, tribological, and chemical properties of metal, intermetallic, and ceramic materials without altering their bulk properties. Ion-solid interactions are the foundation that underlies the broad application of ion beams to the modification of materials. This text is designed to cover the fundamentals and applications of ion-solid interactions and is aimed at graduate students and researchers interested in electronic devices, surface engineering, reactor and nuclear engineering, and materials science issues associated with metastable phase synthesis.

Modern technology depends on materials with precisely controlled properties. Ion beams are a favoured method to achieve controlled modification of surface and near-surface regions. In every integrated circuit production line, for example, there are ion implantation systems. In addition to integrated circuit technology, ion beams are used to modify the mechanical, tribological and chemical properties of metal, intermetallic and ceramic materials without altering their bulk properties. Ion–solid interactions are the foundation that underlies the broad application of ion beams to the modification of materials. This text is designed to cover the fundamentals and applications of ion–solid interactions and is aimed at graduate students and researchers interested in electronic devices, surface engineering, reactor and nuclear engineering and material science issues associated with metastable phase synthesis.

1. General features and fundamental concepts; 2. Interatomic potentials; 3. Dynamics of binary elastic collisions; 4. Cross-section; 5. Ion stopping; 6. Ion range and range distribution; 7. Radiation damage and spikes; 8. Ion–solid simulations and irradiation enhanced transport; 9. Sputtering; 10. Order-disorder under irradiation and ion implantation metallurgy; 11. Ion beam mixing; 12. Phase transformations; 13. Ion beam assisted deposition; 14. Applications of ion beam processing techniques; 15. Ion beam system features; Appendices: A. Crystallography; B. Table of contents; C. Density of states; D. Derivation of the Thomas–Fermi differential equations; E. Centre-of-mass and laboratory scattering angles; F. Miedema's semi-empirical model for the enthalpy of formation in the liquid and solid state; G. Implantation metallurgy – study of equilibrium alloys.

This book describes how materials, from semiconductors to tool steels, can be modified to create new materials. Its importance is that it is the first book in two decades to describe completely the implantation process which is used universally in semiconductor production.