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baglin john (curatore); ila daryush (curatore); marletta giovanni (curatore); Öztarhan ahmet (curatore) - ion beams - new applications from mesoscale to nanoscale: volume 1354

Ion Beams - New Applications from Mesoscale to Nanoscale: Volume 1354

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Dettagli

Genere:Libro
Lingua: Inglese
Pubblicazione: 11/2011





Note Editore

Symposium II, 'Ion Beams - New Applications from Mesoscale to Nanoscale', was held at the 2011 MRS Spring Meeting, April 25–29, in San Francisco, California. This symposium welcomed presentations on ion-beam engineering and characterization of materials properties, structure, topography and functionality, spanning dimensions from the mesoscale to the nanoscale. While the unique capabilities of ion-beam techniques in the diverse emerging fields of nanoscience and nanotechnology are fast becoming critical for many new applications, the flexibility of ion-beam techniques now enables the development of tools that can integrate tailoring of nanoscale patterns and structures with unique in-situ imaging and analysis. This recent evolution has energized new programs, both basic and applied, in fast-developing areas ranging over advanced semiconductor integration, information storage, sensors, plasmonics, molecular engineering, biomaterials and many aspects of the development of alternative energy resources. We should pause occasionally and review the overall state of the field, its emerging opportunities and challenges.




Sommario

Part I. Reviews and Research Reports: 1. Universal biomolecule binding interlayers created by energetic ion bombardment Marcela Bilek; 2. Neural cell attachment on metal ion implanted glass surfaces Emel Sokullu Urkac; 3. Cluster ion beam processing: review of current and prospective applications Isao Yamada; 4. Nano-engineering with a focused helium ion beam Diederik Maas; 5. Multi-ion beam lithography and processing studies Bill Appleton; 6. Ion irradiation effects in silicon nanowires Kai Nordlund; 7. Folding graphene with swift heavy ions Sevilay Akcöltekin; 8. Ion irradiation on phase change materials Emanuele Rimini; 9. Ion beams for synthesis and modifications of nanostructures in semiconductors Anand Pathak; 10. Raman scattering study of Si nanoclusters formed in Si through a double Au implantation Durga Mahapatra; 11. Effects of hydrogen ion implantation and thermal annealing on structural and optical properties of single-crystal sapphire Mengbing Huang; 12. Post-CMOS integration of nanomechanical devices by direct ion beam irradiation of silicon Francesc Perez-Murano; 13. Enhanced adhesion of coating layers by ion beam mixing: an application for nuclear hydrogen production Jae-Won Park; 14. Structural changes induced by swift heavy ion beams in tensile strained Al(1-x)InxN/GaN hetero-structures Anand Pathak; 15. 5 MeV Si ion modification on thermoelectric SiO2/SiO2+Cu multilayer films Cydale Smith; 16. Study of scalable IBS nanopatterning mechanisms for III-V semiconductors using in-situ surface characterization Jean-Paul Allain; 17. Modeling of approximated electron transport across ion beam patterned quantum dot nanostructures Jonathan Lassiter; 18. RBS, XRD, raman and AFM studies of microwave synthesized Ge nanocrystals Anand Pathak; 19. Comparison of ion beam and electron beam induced transport of hot charge carriers in metal-insulator-metal junctions Marika Schleberger; Part II. Forum Report: 20. Future directions for ion beam technology and research: forum report John Baglin.




Prefazione

Symposium II, 'Ion Beams - New Applications from Mesoscale to Nanoscale', was held at the 2011 MRS Spring Meeting, April 25-29, in San Francisco, California. This symposium welcomed presentations on ion-beam engineering and characterization of materials properties, structure, topography and functionality, spanning dimensions from the mesoscale to the nanoscale.










Altre Informazioni

ISBN:

9781605113319

Condizione: Nuovo
Collana: MRS Proceedings
Dimensioni: 235 x 15 x 158 mm Ø 400 gr
Formato: Copertina rigida
Illustration Notes:100 b/w illus. 3 tables
Pagine Arabe: 176


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