Introducing Technology Computer-Aided Design (TCAD) Fundamentals, Simulations, and Applications

This might be the first book that deals mostly with the 3D technology computer-aided design (TCAD) simulations of major state-of-the-art stress- and strain-engineered advanced semiconductor devices: MOSFETs, BJTs, HBTs, nonclassical MOS devices, finFETs, silicon-germanium hetero-FETs, solar cells, power devices, and memory devices. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including design for manufacturing (DFM), and from device modeling to SPICE parameter extraction. The book also offers an innovative and new approach to teaching the fundamentals of semiconductor process and device design using advanced TCAD simulations of various semiconductor structures. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. To extend the role of TCAD in today’s advanced technology era, process compact modeling and DFM issues have been included for design–technology interface generation. Unique in approach, this book provides an integrated view of silicon technology and beyond—with emphasis on TCAD simulations. It is the first book to provide a web-based online laboratory for semiconductor device characterization and SPICE parameter extraction. It describes not only the manufacturing practice associated with the technologies used but also the underlying scientific basis for those technologies. Written from an engineering standpoint, this book provides the process design and simulation background needed to understand new and future technology development, process modeling, and design of nanoscale transistors. The book also advances the understanding and knowledge of modern IC design via TCAD, improves the quality in micro- and nanoelectronics R&D, and supports the training of semiconductor specialists. It is intended as a textbook or reference for graduate students in the field of semiconductor fabrication and as a reference for engineers involved in VLSI technology development who have to solve device and process problems. CAD specialists will also find this book useful since it discusses the organization of the simulation system, in addition to presenting many case studies where the user applies TCAD tools in different situations.

Introduction The Need Role of TCAD TCAD: Challenges TCAD: 2D versus 3D TCAD: Design Flow Extending TCAD Process Compact Model Process-Aware Design Design for Manufacturing TCAD Calibration TCAD Tools Technology Boosters BiCMOS Process Simulation SiGe and SiGeC HBTs Silicon Hetero-FETs FinFETs Advanced Devices Memory Devices Power Devices Solar Cells TCAD for SPICE Parameter Extraction TCAD for DFM VWF and Online Laboratory Summary Technology CAD Tools History of Process and Device Simulation Tools Commercial TCAD Tools Silvaco Tool Overview ATHENA ATLAS Stress Modeling Synopsys TCAD Platforms Atomistic Simulation Summary Technology Boosters Stress Engineering Intentional Mechanical Stress Stress-Engineered Transistors Hybrid Orientation Technology High-k/Metal Gate Stress Evolution during Semiconductor Fabrication Summary BiCMOS Process Simulations Ion Implantation Simulation Optical Lithography Simulation Contact-Printing Simulation BJT Process Simulation 3D MOS Process Simulation Summary SiGe and SiGeC HBTs SiGe HBTs: Process and Device Simulation High-Speed SiGe HBTs SiGeC HBTs: Process and Device Simulation Strain-Engineered SiGe HBTs n-p-n SiGe HBTs with an Extrinsic Stress Layer n-p-n SiGe HBT Device Employing a Si3N4 Strain Layer n-p-n SiGe HBT Employing a SiO2 Strain Layer Summary Silicon Hetero-FETs Electronic Properties of Strained Si and SiGe Strained-Si Channel p-MOSFETs Summary FinFETs Basics of FinFETs Stress-Engineered FinFETs FinFET Design and Optimization Summary Advanced Devices Ultrathin-Body SOI Gate-First SOI Gate-Last SOI 3D SOI n-MOSFET TFT HEMTs AlGaN/GaN HFET 3D SiC Process and Device Simulation Summary Memory Devices Nanocrystal Floating-Gate Device Technology Computer-Aided Design of Memory Devices Process Simulation of Flash Memory Devices Device Simulation of Flash Memory Devices State Transition and Single-Event Upset in SRAM Nanoscale SRAM Summary

Chinmay K. Maiti received his B.Sc. (Hons.) in physics (1969), B.Tech. in applied physics (1972), and M.Tech. in radio physics and electronics (1974) from the University of Calcutta, India. He then did his M.Sc. (Res.) in microelectronics (1976) from Loughborough University, UK, and PhD (Eng.) in microelectronics (1984) from the Indian Institute of Technology (IIT), Kharagpur, India. He later joined IIT as professor and was head of the department (2009–2012). From 2004 to 2006 he was a visiting professor at Queen’s University, Belfast, UK. Ignoring an extension offer from IIT, he joined the SOA University, Bhubaneswar, India, in 2015. Dr. Maiti won the INSA-Royal Society (UK) Exchange of Scientists Fellowship in 2003, the CDIL Award for Industry of the Institution of Electronics and Telecommunication Engineers for the best paper in 1997, and the West Bengal Academy of Sciences Fellowship in 2007. He is interested in semiconductor device/process simulation research and microelectronics education. He has published more than 265 technical articles in the silicon-germanium and heterostructure-silicon areas, written 6 monographs and 6 book chapters, and edited Selected Works of Professor Herbert Kroemer (World Scientific, Singapore, 2008).