Fabless Semiconductor Manufacturing In the Era of Internet of Things

This book deals with 3D nanodevices such as nanowire and nanosheet transistors at 7 nm and smaller technology nodes. It discusses technology computer-aided design (TCAD) simulations of stress- and strain-engineered advanced semiconductor devices, including III-nitride and RF FDSOI CMOS, for flexible and stretchable electronics. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including fabless intelligent manufacturing. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. In order to extend the role of TCAD in the More-than-Moore era, the design issues related to strain engineering for flexible and stretchable electronics have been introduced for the first time.

1. Introduction Chinmay K. Maiti 2. Fabless Intelligent Manufacturing Arup Ratan Saha 3. Simulation Environment Chinmay K. Maiti 4. Nanowire Transistors Suprava Dey 5. Nanosheet Transistors Eleena Mohapatra 6. III-Nitride Flexible Electronic Devices Chinmay K. Maiti 7. FDSOI RF Flexible Electronics Chinmay K. Maiti 8. Simulation at Atomic Scale Arup Ratan Saha

Chinmay K. Maiti is a retired professor and former head of the department, Indian Institute of Technology Kharagpur, India, and currently a visiting professor at SOA University, Bhubaneswar, India. He is interested in strain-engineering in nanodevices, flexible/stretchable electronics, and nanoscale semiconductor device/process simulation research, and microelectronics education. Prof. Maiti has published several monographs on silicon-germanium, heterostructure-silicon, and technology computer-aided design and edited Selected Works of Professor Herbert Kroemer (2008).