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palankovski vassil; quay rüdiger - analysis and simulation of heterostructure devices

Analysis and Simulation of Heterostructure Devices


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Lingua: Inglese
Pubblicazione: 12/2003
Edizione: 2004


Communication and information systems are subject to rapid and highly so­ phisticated changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transis­ tors (HEMTs), are among the fastest and most advanced high-frequency devices. They satisfy the requirements for low power consumption, medium integration, low cost in large quantities, and high-speed operation capabilities in circuits. In the very high-frequency range, cut-off frequencies up to 500 GHz [557] have been reported on the device level. HEMTs and HBTs are very suitable for high­ efficiency power amplifiers at 900 MHz as well as for data rates higher than 100 Gbitfs for long-range communication and thus cover a broad range of appli­ cations. To cope with explosive development costs and the competition of today's semicon­ ductor industry, Technology Computer-Aided Design (TCAD) methodologies are used extensively in development and production. As of 2003, III-V semiconductor HEMT and HBT micrometer and millimeter-wave integrated circuits (MICs and MMICs) are available on six-inch GaAs wafers. SiGe HBT circuits, as part of the CMOS technology on eight-inch wafers, are in volume production. Simulation tools for technology, devices, and circuits reduce expensive technological efforts. This book focuses on the application of simulation software to heterostructure devices with respect to industrial applications. In particular, a detailed discussion of physical modeling for a great variety of materials is presented.


1. Introduction.- 2. State-of-the-Art of Materials, Device Modeling, and RF Devices.- 2.1 State-of-the-Art of Heterostructure RF Device Modeling.- 2.2 State-of-the-Art of Heterostructure Devices and Optimization Potentials.- 3. Physical Models.- 3.1 Sets of Partial Differential Equations.- 3.2 Lattice and Thermal Properties.- 3.3 Band Structure.- 3.4 Carrier Mobility.- 3.5 Energy and Momentum Relaxation.- 3.6 Generation and Recombination.- 4. RF Parameter Extraction for HEMTs and HBTs.- 4.1 RF Parameter Extraction Methods.- 4.2 Contributions to the Small-Signal EquivalentCircuit Element.- 5. Heterojunction Bipolar Transistor.- 5.1 General Considerations.- 5.2 SiGe HBTs.- 5.3 High-Power GaAs HBTs.- 5.4 High-Speed InP HBTs.- 6. High Electron Mobility Transistor.- 6.1 General Considerations.- 6.2 High-Speed and High-Power AlGaAs/InGaAs PHEMTs.- 6.3 High-Speed InAlAs/InGaAs HEMTs on InP and GaAs.- 6.4 High-Power High-Speed AlGaN/GaN HEMTs.- 7. Novel Devices.- 7.1 InP DHBTs with GaAsSb Bases.- 7.2 AlGaN/GaN HBTs.- A. Appendix: Benchmark Structures.- Reference.- List of Figures.- List of Tables.

Altre Informazioni



Condizione: Nuovo
Collana: Computational Microelectronics
Dimensioni: 235 x 155 mm
Formato: Copertina rigida
Illustration Notes:XX, 289 p.
Pagine Arabe: 289
Pagine Romane: xx

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