Analog Electronics for Radiation Detection

Analog Electronics for Radiation Detection showcases the latest advances in readout electronics for particle, or radiation, detectors. Featuring chapters written by international experts in their respective fields, this authoritative text: Defines the main design parameters of front-end circuitry developed in microelectronics technologies Explains the basis for the use of complementary metal–oxide semiconductor (CMOS) image sensors for the detection of charged particles and other non-consumer applications Delivers an in-depth review of analog-to-digital converters (ADCs), evaluating the pros and cons of ADCs integrated at the pixel, column, and per-chip levels Describes incremental sigma–delta ADCs, time-to-digital converter (TDC) architectures, and digital pulse-processing techniques complementary to analog processing Examines the fundamental parameters and front-end types associated with silicon photomultipliers used for single visible-light photon detection Discusses pixel sensors with per-pixel TDCs, channel density challenges, and emerging 3D technologies interconnecting detectors and electronics Thus, Analog Electronics for Radiation Detection provides a single source for state-of-the-art information on analog electronics for the readout of radiation detectors.

Integrated Analog Signal Processing Readout Front Ends for Particle DetectorsThomas Noulis Analog Electronics for HVCMOS SensorsIvan Peric Analog Electronics for Radiation DetectionJuan A. Leñero-Bardallo and Ángel Rodríguez-Vázquez Low-Noise Detectors through Incremental Sigma–Delta ADCsAdi Xhakoni and Georges Gielen Time-to-Digital ConversionYasuo Arai Digital Pulse-Processing Techniques for X-Ray and Gamma-Ray Semiconductor DetectorsLeonardo Abbene, Gaetano Gerardi, and Fabio Principato Silicon Photomultipliers for High-Performance Scintillation Crystal Readout ApplicationsCarl Jackson, Kevin O’Neill, Liam Wall, and Brian McGarvey Designing Photon-Counting, Wide-Spectrum Optical Radiation Detectors in CMOS-Compatible TechnologiesEdoardo Charbon and Chockalingam Veerappan Front-End Electronics for Silicon PhotomultipliersCristoforo Marzocca, Fabio Ciciriello, Francesco Corsi, Francesco Licciulli, and Gianvito Matarrese CMOS Image Sensors for Radiation DetectionNicola Guerrini Technology Needs for Modular Pixel DetectorsPaul Seller

Renato Turchetta is leading the development of high-end complementary metal–oxide semiconductor (CMOS) image sensors at the Rutherford Appleton Laboratory in Didcot, UK, the largest national laboratory in the United Kingdom owned and operated by the Science and Technology Facilities Council (STFC). He earned his master’s degree (Laurea) from the University of Milan, Italy, in 1988 and his PhD in applied physics from the University of Strasbourg, France, in 1991. He worked as an assistant professor there until 1999, the year when he moved to the Rutherford Appleton Laboratory. In his career, he has worked on the development of semiconductor detectors and their readout microelectronics before focusing on CMOS image sensors. He has worked in this area for more than 15 years. He is the author and coauthor of several patents and more than 100 papers that were published in international journals. He is currently an acting member of the scientific committee for Image Sensors Europe, the International Congress on High-Speed Imaging and Photonics, and the Pixel and CPIX conferences.