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nishi yoshio (curatore); doering robert (curatore) - handbook of semiconductor manufacturing technology

Handbook of Semiconductor Manufacturing Technology

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Dettagli

Genere:Libro
Lingua: Inglese
Editore:

CRC Press

Pubblicazione: 07/2007
Edizione: Edizione nuova, 2° edizione





Trama

The second edition of this standard-setting handbook provides an up-to-date reference to the individual processes, equipment, and materials of semiconductor manufacturing technologies. Edited by renowned experts, this book provides graphs, tables, and formulas for easy access to information as well as extensive references for further study. This edition features new and updated chapters on silicon materials, SOI materials and devices, surface preparation, ion implantation, dopant diffusion, in-line metrology, yield modeling, photomask fabrication, failure analysis, damascene copper electroplating, rapid thermal processing, interlevel dielectrics, plasma etch, atomic layer deposition, and more.




Note Editore

Retaining the comprehensive and in-depth approach that cemented the bestselling first edition's place as a standard reference in the field, the Handbook of Semiconductor Manufacturing Technology, Second Edition features new and updated material that keeps it at the vanguard of today's most dynamic and rapidly growing field. Iconic experts Robert Doering and Yoshio Nishi have again assembled a team of the world's leading specialists in every area of semiconductor manufacturing to provide the most reliable, authoritative, and industry-leading information available.Stay Current with the Latest TechnologiesIn addition to updates to nearly every existing chapter, this edition features five entirely new contributions on…Silicon-on-insulator (SOI) materials and devicesSupercritical CO2 in semiconductor cleaningLow-κ dielectricsAtomic-layer depositionDamascene copper electroplatingEffects of terrestrial radiation on integrated circuits (ICs)Reflecting rapid progress in many areas, several chapters were heavily revised and updated, and in some cases, rewritten to reflect rapid advances in such areas as interconnect technologies, gate dielectrics, photomask fabrication, IC packaging, and 300 mm wafer fabrication.While no book can be up-to-the-minute with the advances in the semiconductor field, the Handbook of Semiconductor Manufacturing Technology keeps the most important data, methods, tools, and techniques close at hand.




Sommario

INTRODUCTION TO SEMICONDUCTOR DEVICES; John R. HauserIntroductionOverview of MOS Device CharacteristicsMOSFET Device ScalingManufacturing Issues and ChallengesMOSFET Gate Stack IssuesAdvanced MOS Device ConceptsConclusionsReferencesOVERVIEW OF INTERCONNECT-COPPER AND LOW-κ INTEGRATION; Girish A. Dixit and Robert H. HavemannIntroductionDual Damascene Copper IntegrationCopper/Low κ ReliabilityConclusionReferencesSILICON MATERIALS; Wen Lin and Howard HuffIntroductionSilicon Crystal Growth ProcessesCharacteristics of Czochralski Silicon GrowthTrends in Large Diameter Silicon GrowthWafer PreparationEpitaxial GrowthOxygen Behavior in Silicon ProcessingOther and New Applications of Silicon MaterialsSummaryReferencesSOI MATERIALS AND DEVICES; Sorin Cristoloveanu and G.K. CellerIntroductionSOI Basics: A TutorialSOI Wafer Fabrication Methods-Some DetailsAdvanced Wafer EngineeringPhysical Characterization of SOI WafersElectrical CharacterizationPartially Depleted SOI MOSFETsFully Depleted SOI MOSFETsScaling TrendsMultiple-Gate SOI MOSFETsMEMS and Photonic Applications of SOIConclusionsAcknowledgementsReferencesSURFACE PREPARATION; Glenn W. Gale, Brian K. Kirkpatrick, and Frederick W. Kern Jr.RCA CleanElectrochemistryThe Chemistry of Aqueous SolutionsSC-1ComplexingParticle RemovalParticle AdhesionParticle Removal-Chemical UndercuttingParticle Removal-Electrophoretic Effects and DLVO TheoryParticle Removal-MegasonicsWet Chemical EtchingOxide EtchHydrofluoric Acid and Metallic ContaminationDefects Related to DryingPolysilicon EtchSelective Nitride EtchOxide/Nitride EtchBulk Organic Removal/Photoresist StripPhotolithographySulfuric/Oxidizer ChemistryReaction MechanismSulfuric/Peroxide (PIRANHA)DI/OZONESurface Preparation and Cleaning for InterconnectSubtractive Aluminum InterconnectKey Subtractive Aluminum Cleaning Challenges with Associated DefectsCopper/Low-κ Dual Damascene InterconnectKey Cu/Low-κ Challenges with Associated DefectsTypical DefectsControl and Monitoring of Surface Treatment ProcessesReferencesSUPERCRITICAL CARBON DIOXIDE IN SEMICONDUCTOR CLEANING; Mohammed J. Meziani, Pankaj Pathak, and Ya-Ping SunIntroductionSupercritical FluidsSupercritical CO2 Cleaning ProcessesProcessing EquipmentConclusions and PerspectivesReferencesION IMPLANTATION; Michael Ameen, Ivan Berry, Walter Class, Hans-Joachim Gossmann, and Leonard RubinIntroductionIon Implant Physics and Materials ScienceApplications of Ion ImplantationCommercial Ion Implantation EquipmentProcess Control in Ion ImplantationReferencesDOPANT DIFFUSION; Sanjay BanerjeeIntroductionDefinition of Point DefectsThermodynamics of DefectsMigration and Diffusion of Point DefectsFick's Laws of DiffusionEquilibrium Formulation for Dopant DiffusionNon-Equilibrium Formulation for Dopant DiffusionDiffusion in Strained SiliconConclusions and Future ResearchAcknowledgmentsReferencesOXIDATION AND GATE DIELECTRICS; C. Rinn Cleavelin, Luigi Colombo, Hiro Niimi, Sylvia Pas, and Eric M. VogelIntroduction to Oxidation and Gate Dielectric TechnologyOxidation TheoryOxidation InteractionsNumerical Modeling of OxidationMetrology of Dielectric FilmsGate DielectricsSummaryReferencesSILICIDES; Christian Lavoie, Francois M. d'Heurle, and Shi-Li ZhangScope of the ChapterIntroductionDevelopment Trends of SilicideNickel Silicide for Contacts and InterconnectionsMetal Gate and Schottky Barrier Source-DrainSummaryAcknowledgmentsReferencesRAPID THERMAL PROCESSING; P.J. TimansIntroductionRTP System Hardware and Control TechnologySemiconductor Processing Using RTPConclusionAcknowledgmentsReferencesLOW-κ DIELECTRICS; Ting Y. Tsui and Andrew J. McKerrowIntroductionChannel Crack FailuresElastic Constraint EffectsPattern Layout EffectsEnvironmental EffectsConclusionReferencesCHEMICAL VAPOR DEPOSITION; Li-Qun Xia and Mei ChangIntroduction: What Is CVD and Why CVDBasic Aspects of CVDCVD System DesignCVD Thin FilmsReferencesATOMIC LAYER DEPOSITION; Thomas E. SeidelIntroductionALD OriginsChemical ProcessesALD System TechnologyApplicationsSummary of Current Status and OutlookAcknowledgmentsReferencesPHYSICAL VAPOR DEPOSITION; Stephen M. RossnagelIntroduction and Semiconductor ApplicationsSputtering Background and BasicsPVD SystemsApplications and Variations for Interconnect ApplicationsSummary, Future DirectionsReferencesDAMASCENE COPPER ELECTROPLATING; Jonathon ReidIntroductionFundamentals of ElectroplatingDamascene Cu Electroplating ChemistryDamascene Film DepositionModeling CapabilitiesProcess IntegrationProcess Control ApproachesAcknowledgmentsReferencesCHEMICAL-MECHANICAL POLISHING; Gregory B. Shinn, Vincent Korthuis, Gautum Grover, Simon Fang, and Duane S. BoningIntroductionEquipment and ConsumablesMechanisms and ModelsApplications and IssuesPost-CMP CleanReferencesOPTICAL LITHOGRAPHY; Gene E. FullerIntroductionPatterning BasicsOptics for ManufacturingExposure Tool System ConsiderationsResolution Enhancement TechniquesManufacturing ConsiderationsRecent Advances in Optical LithographyPatterning RoadmapsSummaryReferencesPHOTORESIST MATERIALS AND PROCESSING; César M. Garza, Will Conley, and Jeff ByersFormation of the Relief ImageFormation of a Relief Image in Novolac-Based PhotoresistsFormation of the Relief Image in Chemically Amplified ResistsArF Materials, Immersion Lithography, and Extension of ArFReferencesPHOTOMASK FABRICATION; Syed A. Rizvi and Sylvia PasIntroductionPhotomask: Structure and FabricationWriting Patterns on MasksMaterials and ProcessingPhotomask QualificationManufacturability and COOReferencesPLASMA ETCH; Peter L.G. Ventzek, Shahid Rauf, and Terry SparksIntroductionTechnical Basics of Plasmas Relevant to Plasma Etching65-90 nm CMOS Etch Process ModulesThe Next Generation-45-32 nm Technology NodesNanotechnology-22 nm and BeyondModeling of Plasma Etching ProcessesReferencesEQUIPMENT RELIABILITY; Vallabh H. DhudshiaIntroductionReliability Metrics CalculationsApplications of Reliability MetricsConfidence Limits CalculationsPrecise Use of the Reliability MetricsMaintainability MetricsHigh-Level Equipment Performance MetricsAn Example of Reliability and High Level Performance Metrics CalculationsFour Steps to Better Equipment ReliabilityReliability TestingUse of Equipment Reliability Discipline in Business PracticesSEMI E10ReferencesOVERVIEW OF PROCESS CONTROL; Stephanie Watts ButlerIntroduction to Control of Systematic Yield LossThe Control-Type CategoriesHistory of Process Control in Semiconductor ManufacturingCharacterization of Control Needs in Semiconductor ManufacturingBasic Concepts of all Control TechniquesSpecific Abnormality Detection and Control MethodsSpecific Compensation Control MethodsMonitoring the Supervisory Run-to-Run Controller and the Controller System (APC)Continuous Process ImprovementSummaryAcronyms and GlossaryReferencesFurther ReadingIN-LINE METROLOGY; Alain C. DieboldIntroductionMetrology for Lithography Processes: Critical Dimension Measurement and Overlay ControlMetrology for Front End ProcessesInterconnect Process ControlIn-FAB FIBAcknowledgmentsReferencesIN-SITU METROLOGY; Gabriel G. Barna and Brad VanEckIntroductionProcess State SensorsWafer-State SensorsMeasurement Techniques for Potential SensorsSoftware for In-Situ MetrologyUse of In-Situ Metrology in SC ManufacturingReferencesYIELD MODELING; Ron Ross and Nick AtchisonIntroductionCluster AnalysisYield ModelsYield LimitsSummaryReferencesYIELD MANAGEMENT; Louis Breaux and Sean CollinsIntroductionSources and Types of Random DefectsYield Management MethodologySummaryReferencesELECTRICAL, PHYSICAL, AND CHEMICAL CHARACTERIZATION; Dieter K. Schroder, Bruno W. Schueler, and Greg S. StrossmanIntroductionElectrical CharacterizationPhysical and Chemical CharacterizationReferencesFAILURE ANALYSIS; Lawrence C. WagnerIntroductionFailure Site IsolationPhysical Analysis ToolsChemical CharacterizationFuture of Failure AnalysisReferencesRELIABILITY PHYSICS; J.W. Mcpherson and E.T. OgawaIntroductionAccelerated TestingTime-to-Failure Mod




Autore

Nishi, Yoshio; Doering, Robert










Altre Informazioni

ISBN:

9781574446753

Condizione: Nuovo
Dimensioni: 10 x 7 in Ø 4.45 lb
Formato: Copertina rigida
Illustration Notes:1051 b/w images, 227 tables and 179 halftones
Pagine Arabe: 1720


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