Advances in Imaging and Electron Physics

Advances in Imaging and Electron Physics, Volume 213, merges two long-running serials, Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy. The series features extended articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science, digital image processing, electromagnetic wave propagation, electron microscopy and the computing methods used in all these domains.

• Contains contributions from leading authorities on the subject matter
• Informs and updates on the latest developments in the field of imaging and electron physics
• Provides practitioners interested in microscopy, optics, image processing, mathematical morphology, electromagnetic fields, electrons and ion emission with a valuable resource
• Features extended articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science and digital image processing

Part 1: Quantum degeneracy 1. Partially coherent quantum degenerate electron matter waves Sam Keramati, Eric Jones, Jeremy Armstrong, Herman Batelaan

Part 2: The contribution of atom probe tomography to the correlation of the optical and structural properties of semiconductor nanostructures 2. Laser-assisted atom probe tomography Lorenzo Rigutti 3. Inaccuracies in atom probe measurements of semiconductor composition Lorenzo Rigutti 4. Atom probe-based correlative microscopy Lorenzo Rigutti 5. In-situ optical spectroscopy within an atom probe Lorenzo Rigutti

Part 3: CPO Proceedings Papers 6. Derivation, Cross-Validation, and Comparison of Analytic Formulas for Electrostatic Deflector Aberrations Eremey Valetov, Martin Berz 7. Analysis and Fringe Field Scaling of a Legacy Set of Electrostatic Deflector Aberration Formulas Eremey Valetov

Part 4: Advances in Optical Electron Microscopy 8. Scanning Optical Microscopy C. J. R. Sheppard

Dr Martin Hÿtch, serial editor for the book series "Advances in Imaging and Electron Physics (AIEP) , is a senior scientist at the French National Centre for Research (CNRS) in Toulouse. He moved to France after receiving his PhD from the University of Cambridge in 1991 on "Quantitative high-resolution transmission electron microscopy (HRTEM) , joining the CNRS in Paris as permanent staff member in 1995. His research focuses on the development of quantitative electron microscopy techniques for materials science applications. He is notably the inventor of Geometric Phase Analysis (GPA) and Dark-Field Electron Holography (DFEH), two techniques for the measurement of strain at the nanoscale. Since moving to the CEMES-CNRS in Toulouse in 2004, he has been working on aberration-corrected HRTEM and electron holography for the study of electronic devices, nanocrystals and ferroelectrics. He was laureate of the prestigious European Microscopy Award for Physical Sciences of the European Microscopy Society in 2008. To date he has published 130 papers in international journals, filed 6 patents and has given over 70 invited talks at international conferences and workshops.
Professor Peter Hawkes obtained his M.A. and Ph.D (and later, Sc.D.) from the University of Cambridge, where he subsequently held Fellowships of Peter House and of Churchill College. From 1959 - 1975, he worked in the electron microscope section of the Cavendish Laboratory in Cambridge, after which he joined the CNRS Laboratory of Electron Optics in Toulouse, of which he was Director in 1987. He was Founder-President of the European Microscopy Society and is a Fellow of the Optical Society of America. He is a member of the editorial boards of several microscopy journals and serial editor of Advances in Electron Optics.