Micro- and Nanoelectronics Emerging Device Challenges and Solutions

Micro- and Nanoelectronics: Emerging Device Challenges and Solutions presents a comprehensive overview of the current state of the art of micro- and nanoelectronics, covering the field from fundamental science and material properties to novel ways of making nanodevices. Containing contributions from experts in both industry and academia, this cutting-edge text: Discusses emerging silicon devices for CMOS technologies, fully depleted device architectures, characteristics, and scaling Explains the specifics of silicon compound devices (SiGe, SiC) and their unique properties Explores various options for post-CMOS nanoelectronics, such as spintronic devices and nanoionic switches Describes the latest developments in carbon nanotubes, iii-v devices structures, and more Micro- and Nanoelectronics: Emerging Device Challenges and Solutions provides an excellent representation of a complex engineering field, examining emerging materials and device architecture alternatives with the potential to shape the future of nanotechnology.

Preface Editor Contributors Silicon Compound Devices SiGe BiCMOS Technology and Devices; Edward Preisler and Marco Racanelli Si–Ge Interdiffusion, Dopant Diffusion, and Segregation in SiGe- and SiGe:C-Based Devices; Guangrui (Maggie) Xia and Yuanwei Dong SiC MOS Devices: N Passivation of Near-Interface Defects; P. M. Mooney and A. F. Basile Advanced CMOS Devices Fully Depleted Devices: FDSOI and FinFET; Bruce Doris, Ali Khakifirooz, Kangguo Cheng, and Terence Hook Fully Depleted SOI Technology Overview; Bich-Yen Nguyen, Frederic Allibert, Christophe Marville, and Carlos Mazure FinFETs: Designing for New Logic Technology; W. P. Maszara Reliability Issues in Planar and Nonplanar (FinFET) Device Architectures; Barry P. Linder, Eduard A. Cartier, Siddarth A. Krishnan, Chunyan E. Tian, and Vijay Narayanan High-Mobility Channels; Nadine Collaert 2-D InAs XOI FETs: Fabrication and Device Physics; Rehan Kapadia, Kuniharu Takei, Hui Fang, and Ali Javey Post-CMOS Device Concepts Beyond-CMOS Devices; An Chen Stateful STT-MRAM-Based Logic for Beyond–Von Neumann Computing; Hiwa Mahmoudi, Thomas Windbacher, Viktor Sverdlov, and Siegfried Selberherr Four-State Hybrid Spintronics–Straintronics for Ultralow Power Computing; Noel D’Souza, Jayasimha Atulasimha, and Supriyo Bandyopadhyay Nanoionic Switches as Post-CMOS Devices for Neuromorphic Electronics; Takeo Ohno Elements of Carbon Electronics Physics-Based Compact Graphene Device Modeling; Kristen Parrish and Deji Akinwande Carbon Nanotube Vertical Interconnects: Prospects and Challenges; S. Vollebregt, C. I. M. Beenakker, and R. Ishihara Graphene Nanosheet as Ultrathin Barrier; Yuda Zhao and Yang Chai

Tomasz Brozek is a technical fellow at PDF Solutions, San Jose, California, USA, where he is responsible for advanced silicon technology characterization, diagnostic methods development, and early yield ramp of integrated circuits. He holds an MS EE and a Ph.D in physics. His doctorate research at the Institute of Semiconductor Physics in Kiev, Ukraine focused on radiation effects and degradation in microelectronic MOS systems. Previously he taught and conducted research at Warsaw University of Technology, Poland and the University of California, Los Angeles, USA, and worked at Motorola R&D organizations in Texas and Arizona, USA.